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Advanced filters: Author: Peter Polcik Clear advanced filters

Enhanced non-volatile resistive switching performance through ion-assisted magnetron sputtering of TiN bottom electrodes

Non-volatile memristor-based memories with resistive switching materials are promising for next-generation data storage and neuromorphic technologies. Here, the importance of precise tuning of TiN_x bottom electrodes in HfO₂-based memristive devices is demonstrated.

Babak Bakhit
Markus Hellenbrand
Judith L. MacManus-Driscoll
ResearchOpen Access18 Apr 2025
Communications Materials

Volume: 6, P: 1-8
Author Correction: Improved oxidation behavior of Hf_0.11Al_0.20B_0.69 in comparison to Hf_0.28B_0.72 magnetron sputtered thin films

Pauline Kümmerl
Sebastian Lellig
Jochen M. Schneider
Amendments and CorrectionsOpen Access24 Oct 2024
Scientific Reports

Volume: 14, P: 1
Improved oxidation behavior of Hf_0.11Al_0.20B_0.69 in comparison to Hf_0.28B_0.72 magnetron sputtered thin films

Pauline Kümmerl
Sebastian Lellig
Jochen M. Schneider
ResearchOpen Access17 Sept 2024
Scientific Reports

Volume: 14, P: 1-13
Ab initio inspired design of ternary boride thin films

Vincent Moraes
Helmut Riedl
P. H. Mayrhofer
ResearchOpen Access18 Jun 2018
Scientific Reports

Volume: 8, P: 1-9

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