Sen et al. report the stacking of a perovskite incipient ferroelectric nanomembrane with atomically thin 2D material for a back-end-of-line compatible ferroelectric-like field effect transistors, functioning as a cryogenic memory at 15 K and as an inference engine at room temperature.
- Dipanjan Sen
- Harikrishnan Ravichandran
- Saptarshi Das
