We present a promising technique for transparent flexible conducting oxide heteroepitaxial films: the direct fabrication of epitaxial molybdenum-doped indium oxide (IMO) thin films on a transparent flexible muscovite substrate. An n-type epitaxial IMO film is demonstrated with a mobility of 109 cm2 V−1 s−1, a figure of merit of 0.0976 Ω−1, a resistivity of 4.5 × 10−5 Ω cm and an average optical transmittance of 81.8% in the visible regime. IMO heterostructure not only exhibits excellent performance but also shows excellent mechanical durability. This study demonstrated an extraordinary achievement for the evolution and expansion of next-generation smart devices.
- Chun-Hao Ma
- En-Liang Chen
- Ying-Hao Chu
