Introduction

Power electronics hold a key role in numerous applications such as renewable energy integration, motor drives, consumer electronics, and transportation electrification etc. Therefore, efficient thermal management in power electronics circuits is essential to ensure their reliability, longevity, and optimal performance under varying operating conditions. The efficient operation of power electronics circuits relies heavily on an efficient heat transfer during their operation, as excessive heat resulting from improper heat management can lead to reduced performance, premature failure, and safety hazards. Consequently, the significance of developing effective thermal management systems has become more pronounced. This increased emphasis on effective thermal management in power electronics circuits is also driven by the heightened awareness of high failure rates in electronics components caused by thermal issues1.

Thermal management in power electronics circuits is achieved through thermal interface materials (TIMs) which play a crucial role in mitigating thermal issues by facilitating the transfer of heat from high-power components to heat sinks. TIM acts as a bridge between heat-generating components like power transistors, diodes, and heat sinks, enabling efficient heat transfer and lowering the overall thermal resistance. In the existing literature, different types of TIMs have been used to address thermal challenges within power electronics circuits. Each of them provides its distinct capability in optimizing thermal conductivity, enhancing heat dissipation, and facilitating efficient thermal management in a variety of applications. Thermal greases or pastes are the most widely used TIMs which provide high thermal conductivity to facilitate efficient heat transfer across thermal interfaces2,3.

Traditional thermal greases are mainly composed of polymers and inorganic fillers such as metal nanoparticles4, Boron Nitride(BN)5, Aluminum Nitride(AlN)6 and nano clays7. In the conventional thermal greases, the particles with high thermal conductivity are separated by very low thermal conductivity polymers, which results in thermal conductivity below 5 W/m.K even with the high thermal conductivity filler particles (k > 300 W/m.K)8. However, thermal greases as TIM are susceptible to drying out and aging over time, which can lead to an increase in their thermal resistance and decrease in efficient heat transfer capability.

Thermal pads have been used in high power density electronics circuits due to their advantages in terms of conformability and ease of use in addition to their heat transfer ability9,10. Nonetheless, it is important to note that while thermal pads offer exceptional conformability and user-friendliness, their thermal conductivity tends to be lower compared to certain other TIM alternatives which results in reduced thermal resistance and heat transfer efficiency. Several other materials like phase change materials (PCM), solders and Carbon Nanotubes(CNTs)11 are also being used as thermal interface materials.

PCMs have gained widespread acceptance in a variety of power electronics applications as they offer a unique advantage in thermal management due to their ability to efficiently absorb and dissipate heat through a phase transition process. PCMs undergo a phase transition from solid to liquid as they absorb heat, and then subsequently return to their solid state upon cooling. PCMs have been used as TIMs in various power electronics applications ranging from underwater battery power systems to high density electronics circuits, due to their consistent thermal performance across a range of temperatures12,13,14,15,16. However, PCMs have a finite number of phase change cycles before their potential degradation, which may require them to undergo frequent replacement in applications involving frequent maintenance.

Besides, adhesive thermal tapes or films have also gained recognition in consumer electronics and other electronics circuits for their ease of application and their ability to establish a secure and efficient thermal connection between heat sources and heatsinks. Although these thermal tapes or films offer ease of application, they may not offer the same level of thermal conductivity as other TIMs and can also be challenging to remove without potentially damaging the components or surfaces they are attached to.

Carbon-based materials such as CNTs and graphene (used directly or as fillers in composites) have been the focus of research in recent years17. However, complex fabrication and cost-intensive nature limit their feasibility as TIM. Low-melting-temperature alloys (LMTAs) that consist of Gallium (Ga), Bismuth (Bi), Indium (In), and Tin (Sn) have also been of particular interest as TIMs, especially Gallium alloys with a melting point below room temperature, which is often called liquid metal. The thermal conductivity of Gallium alloys is much higher than that of traditional polymer based TIMs. Some manufacturers already have commercial products of Gallium alloys for enthusiasts that are in search of better TIMs. According to existing literature, vigorous stirring can effectively improve the wettability of Gallium alloys with other materials. However, it can decrease the value of thermal conductivity from 29.3 W/m.K to 13.1 W/m.K18,19. Hence, to meet the rapidly growing demand for thermal design, it is critical to improve its thermal properties. Recently, the interest in the role of Gallium as TIM has been continuously growing because of its superior thermal and physical properties, like high thermal conductivity, excellent wetting properties, low thermal resistance, low toxicity, and low melting temperatures. In a recent study, the incorporation of tungsten microparticles into gallium-based liquid metals was shown to enhance thermal conductivity significantly, achieving two- to threefold improvements. However, this study does not focus on the application of these thermal interface materials20. A study carried out by Fan et al., demonstrated that liquid metal–organic (LMO) compounds, when used alongside Gallium-Indium and Galinstan alloys, offer comparable thermal properties to traditional liquid metal alloys while improving adhesion, antioxidation, and dispensing performance and result in significant improvements in thermal conductivity and reduced thermal resistance21. Additionally, a research study has demonstrated that varying concentrations of tungsten when added to EGaInSn results in a twofold increase in the thermal conductivity of the thermal interface material22. Liquid metals have also been employed as thermal interface materials in microprocessors, LEDs, and other electronics. However, a significant concern for their use in power electronics is the risk of leakage, which could lead to short circuits and compromise electrical safety23. Despite the extensive research on liquid metal-based thermal interface materials (TIMs), which highlights their high thermal conductivity and low thermal resistance, there remains a notable research gap in the application of gallium-based TIMs in DC-DC boost converter circuits, especially in relation to MOSFET performance. There is a need for TIMs optimized for vertically mounted MOSFETs in these circuits, as well as for quantifying the resulting performance improvements. This highlights an area for future research, aiming to bridge this gap by developing suitable TIMs and assessing their impact on thermal management in power electronics.

From the literature review, it is evident that despite each type of TIM offering its own distinct advantages catering to specific application requirements and thermal management challenges, there still exists a research gap especially in exploring the Gallium based TIMs and their application in power electronics circuits. To address the existing research gaps and provide a distinctive contribution, this research work presents a novel thermal interface material based on Tungsten-Gallium where three different samples of TIMs made of Gallium and Tungsten are examined through material characterization and explores its application in a DC-DC boost converter. These three samples of TIM raise the threshold frequency of MOSFET and are subjected to material characterization which includes both morphological analysis and thermal conductivity testing.

The main contributions of this research work are summarized as follows:

  • This paper introduces a novel thermal interface material based on Tungsten-Gallium for effective thermal management in power converter circuits.

  • Thermal characterization test demonstrates that an addition of 10%/wt. of Tungsten in Gallium based TIM results in a remarkable 74.2% overall increase in its thermal conductivity, raising from 13.1 to 22.82 W/m.K at room temperature.

  • The incorporation of Tungsten into the Gallium-based TIM resulted in a substantial improvement in both viscosity and fluidity, even when exposed to elevated temperatures reaching up to 308 °C.

  • The efficacy of the proposed TIM samples is further validated in a DC-DC boost converter circuit, demonstrating an impressive increase in the switching frequency of the MOSFET IRF3808 by up to 20 kHz when employing the proposed TIM compared to the conventional TIM solutions.

  • The power dissipation due to conduction losses in MOSFET is lowest when TIM Sample 2 is used as a proposed TIM.

The rest of the paper is organized as follows. Section “Methodology” describes the thermal interface materials and methodology for preparation of the proposed TIM samples. Section “Characterization of TIM samples” provides the testing of the proposed TIM samples in a DC-DC boost converter circuit. Section “Testing of TIM in a power electronics circuit” provides the results and discussion section followed by the conclusion in Section  “Result and discussion”.

Methodology

As electronics devices continue to evolve, the need for effective thermal management to address heat dissipation becomes increasingly prominent due to their higher voltages, higher operating temperatures, faster switching and compact designs. To mitigate these thermal issues in power electronics circuits and facilitate the efficient transfer of heat from hot electronics components, such as microprocessors or power modules, to heat sinks, a thermally conductive filler material called thermal interface material (TIM) is used, as shown in Fig. 1a.

Fig. 1
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(a) Schematic showing the placement of TIM between MOSFET and Heat sink (b)Temperature curve.

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TIMs serve as the essential bridge between electronics components which generate heat and cooling systems which are designed to dissipate that heat efficiently. TIMs come in various forms, including thermal pastes, thermal greases, thermal pads, phase-change materials, and more, each tailored to specific applications and thermal conductivity requirements. The TIM with the thermal conductivity(k) exceeding air will provide the most feasible strategy to cater the heat transfer issues by filling air gaps between the contacting surfaces24,25,26.

The relationship between thermal contact resistance and the temperature drop that occurs across it is illustrated in Fig. 1b, which highlights the bottleneck in heat transfer at the thermal interface between two contacting surfaces. It is evident from the temperature distribution curve that the temperature drop occurs across two areas of contact, where surface roughness is clearly visible. The heat dissipation characteristics can be improved by using TIM that would lower thermal resistance caused by air at the contact surfaces. Both thermal resistances are denoted by Rco1 and Rco2, whereas RTIM denotes the thermal resistance by TIM.

The main idea behind the development of Ga-based TIM is to enhance its thermal conductivity by adding high conductivity filler particles, which can include non-metallic filler particles such as carbon nanotubes (CNTs), diamond, graphene, some high conductivity ceramics that include but are not limited to Aluminum Nitride (AlN) and Boron Nitride (BN).

However, these particles have poor wettability with liquid metal due to intense scattering of electrons and phonons at the surface. On the other hand, metals offer the highest thermal conductivity and have good wettability with Gallium. However, the reaction rate of Gallium with high thermal conductivity metals such as aluminum, silver and copper is so rapid that it transforms into intermetallic compounds in a very short period, with Gallium drying out quickly which compromises the wettability of Gallium27.

Therefore, it is necessary to search for some metal that is resistant to Gallium corrosion, possesses high thermal conductivity and has good wetting properties with Gallium. There is a class of metals called refractory metals which are highly corrosion resistant and among these metals, Tungsten has the highest thermal conductivity and exists in a stable form. Tungsten was chosen for its high thermal conductivity, resistance to gallium corrosion, mechanical strength, and good wetting properties. Unlike other metals like copper or nickel which rapidly form intermetallic compounds with gallium, tungsten maintains a stable, purely mechanical contact, ensuring superior heat dissipation, mechanical strength, and reliable performance in thermal interface materials under high-temperature conditions. It also has good wettability properties and low corrosion rate with Gallium28. Previous research work has shown that the contact of Gallium with Tungsten is mechanical (trapping in surface grooves)29, which ensures its ability to maintain the long-term durability of Gallium based TIMs. Physical properties of Gallium (Ga) and Tungsten(W) are provided in Table 1.

Table 1 Properties of pure gallium and tungsten micro-particles.
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Preparation of TIM

In order to prepare proposed TIM, Gallium (purity 99.99% wt) and Tungsten micro-particles (particle size ≈ 25 µm) were used as raw materials and mixed in different proportions to get three samples. To prepare the mixture, an explorative approach was employed with the intended concentrations of (Ga 90%, W 10%), (Ga 55%, W 45%), and (Ga 10%, W 90%) for samples 1, 2, and 3, respectively. However, for sample 3, the mixture had become saturated at a tungsten concentration of 67%, therefore, (Ga 33%, W 67%) was used instead as shown in Table 2.

Table 2 Mixing ratio of gallium and tungsten.
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Afterwards, samples were sonicated to ensure uniform dispersion. Gallium has a low melting temperature of 29.78 °C with high fluidity and low wetting properties. Thus, Tungsten micro particles were added to increase its viscosity and wettability. For this purpose, pure Gallium was first melted and poured into a glass vial and stirred with the help of a stirrer at 39 °C for 24 h to get it partially oxidized. Then, the Tungsten powder was added in small amounts to the alloy of liquid metal and its oxide to ensure homogenous stirring and constant dispersion of Tungsten particles in the alloy. The samples were then passed through a sonicator at a frequency of 40 kHz at 50 °C for 4 h, to guarantee uniform dispersion of Tungsten particles throughout the sample while Gallium is in liquid form. Figure 2 shows the process flow for TIM preparation.

Fig. 2
figure 2

Methodology adopted for preparation of Tungsten-Gallium based TIMs.

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These samples having different physical appearance as shown in Fig. 3 are further characterized to evaluate the variation of thermophysical properties with the variation of Tungsten particle’s concentration.

Fig. 3
figure 3

Gallium-Tungsten based TIM samples (a) Sample 1, (b) Sample 2, (c) Sample 3.

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Characterization of TIM samples

The following attributes of the developed TIM need to be examined.

The surface characteristics of TIM samples were examined through Scanning Electron Microscopy (SEM). A small amount of sample was spread on the carbon tape and coated with a thin layer of gold (15 nm). Due to very low melting point, the sample was kept under the electron beam under the pressure of 10−7 torr, for the lowest time possible to avoid melting when electron beam is targeted on it, which could cause discrepancy in results obtained.

Surface roughness

For measurement of the surface roughness, the developed TIM was used between the MOSFET and heat sink, making surface morphology a critical consideration during material and parameter selection for TIM. To assess the surface roughness of the MOSFET, Atomic Force Microscopy (AFM) was performed over an area of 25 µm × 25 µm, providing a detailed analysis of surface irregularities. This evaluation is crucial for determining the appropriate size of Tungsten microparticles to be used in the Gallium-based TIM. The resultant surface morphology of the MOSFET is shown in Fig. 4.

Fig. 4
figure 4

AFM of MOSFET surface.

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Thermal conductivity

The thermal constant analyzer (Model: TPS 1500, Hot Disk Instruments, accuracy up to ± 5%) was used to measure thermal properties of the sample. Due to the soft nature of TIM sample, Teflon crucible (Fig. 5a) was used to provide support to material during thermal conductivity testing. TIM sample was filled in the crucible in diameter of 15 mm and the thickness of 4 mm (Fig. 5b). Although one crucible is sufficient to measure the thermal conductivity of the samples, experiments are repeated with two crucibles to confirm the repeatability of the results (Fig. 5c).

Fig. 5
figure 5

Setup for conductivity testing (a) Teflon crucible (b) Crucible dimensions (c) Teflon crucible filled with TIM sample.

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Viscosity

The change in viscosity would be observed by visually comparing both pure Gallium and the sample prepared based on the difference in fluidity. While Gallium melts at 29.78 °C, and Tungsten at 3410 °C34, so when Tungsten particles are added to Gallium at 39 °C i.e. solid is added to a liquid, this decreases the fluidity of pure Gallium, and the resultant material is semi-solid (Fig. 6c).

Fig. 6
figure 6

(a) Liquid Gallium (b) Tungsten microparticles (c) TIM sample.

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From Fig. 6, it is clear that the prepared TIM sample provides higher viscosity and lower fluidity as compared to pure Gallium and also possesses excellent wettability. Therefore, it can adhere to the surface of MOSFET and heat sink more effectively and it is easier to handle as compared to pure Gallium. Increased viscosity of TIM also helps in preventing leakage when heated. Therefore, it fulfills the criteria of a TIM that is appropriate for use in MOSFET applications.

Testing of TIM in a power electronics circuit

The prepared samples of TIM were tested in a power electronics circuit such as DC-DC boost converter circuit as given in Fig. 7 to determine the desired value of switching frequency at which the converter must operate effectively by utilizing the developed TIM samples. For this purpose, an experimental setup is established which consists of function generator (DG1022), oscilloscope (DP21A), DC-DC boost converter and a resistive load as shown in Fig. 8. The components specifications of the converter are listed in Table 3.

Fig. 7
figure 7

Circuit diagram of DC-DC boost converter with a resistive load.

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Fig. 8
figure 8

(a) DC-DC boost converter with DC power supply and function generator, (b) Circuit of DC-DC boost converter with a resistive load.

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Table 3 Components specifications of DC-DC boost converter.
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MOSFET of IRF 3808 model was used to test the samples of TIM in a boost converter. This MOSFET was tested with different TIM samples and heatsink by using five different configurations as listed below:

  1. 1.

    MOSFET with heatsink only.

  2. 2.

    MOSFET with heatsink and conventional thermal grease as TIM (k = 1.3 W/m.K).

  3. 3.

    MOSFET with heatsink and TIM sample 1.

  4. 4.

    MOSFET with heatsink and TIM sample 2.

  5. 5.

    MOSFET with heatsink and TIM sample 3.

The thermal pastes and TIM samples were applied on the heat sink surface using silicon spatula with uniform thickness of approximately 0.21 mm. All five configurations are visible in Fig. 9. A thermal imaging camera was used to measure temperature at the surface of MOSFET and heat sink.

Fig. 9
figure 9

Electrical testing of MOSFET with heat sink and TIM samples (a) MOSFET with no TIM, (b) MOSFET with thermal grease, (c) MOSFET with TIM Sample 1, (d) MOSFET with TIM Sample 2, (e) MOSFET with TIM Sample 3.

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Results and discussion

This section explains the results obtained from characterization of TIM (surface morphology, elemental analysis and thermal conductivity) and testing of TIM samples in a DC-DC boost converter circuit.

Morphology of TIMs

Figure 10 below shows the SEM images of three TIM samples prepared with different compositions of Gallium and Tungsten. The results show that the Tungsten particles are fully covered with liquid metal after mixing, indicating good wettability of Tungsten particles with Gallium which may effectively improve the phonon mismatch between heterogeneous materials. Figure 12a shows the sample with the lowest concentration of Tungsten (10%/wt), Fig. 12b shows higher concentration of Tungsten (45%/wt), Fig. 12c shows the sample with the highest concentration of Tungsten (67%/wt).

Fig. 10
figure 10

SEM images of (a) sample 1 (b) sample 2 (c) sample 3.

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It is observed that with the higher concentration of Tungsten, the morphology of Tungsten microparticles become prominent, which means physical properties of Tungsten also dominate.

Thermal conductivity of TIMs

Although three samples with varying concentrations of tungsten in gallium, specifically 10%, 45%, and 67% were prepared initially, the third sample was unavailable for thermal conductivity testing due to an unexpected depletion of 3rd sample during the preliminary testing. Therefore, thermal conductivity of only two samples was measured. Thermal conductivity of TIMs was measured directly using Hotdisk TPS-1500S Thermal constant analyzer. The accuracy of thermal conductivity measurements using the Hotdisk TPS-1500 is typically within 5%, which is a standard precision level for such instruments, but the error margin in these measurements is around 2%. To calculate the average thermal conductivity of each sample, three tests were performed. Gallium’s thermal conductivity reduced to 13.1 W/(m.K) after it was initially oxidized with the help of stirring15,16. According to Table 4, sample 1 thermal conductivity increased by 74.2% with the addition of 10%/wt of tungsten, whereas sample 2 thermal conductivity increased by 29.08% with the addition of 45%/wt of tungsten microparticles. The high thermal conductivity of tungsten (173 W/m.K) is what has caused this alteration. This shows that sample 1 is a superior TIM than sample 2 in terms of thermal conductivity.

Table 4 Percentage increase in thermal conductivity of TIM samples.
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Test results of TIMs in a DC-DC boost converter

All the TIMs samples prepared were tested on MOSFET by using the experimental test setup as presented in Fig. 8. The input DC voltage of the converter was kept at 5 V. The MOSFET of the converter was driven at a particular switching frequency. The switching frequency was varied from 10 to 270 kHz by using function generator. Several parameters like frequency, temperatures at the surfaces of MOSFET and heatsink, gate current and threshold points were recorded. The thermal imaging camera measured the temperature at the surfaces of MOSFET and heat sink at different values of switching frequencies.

Using the Fluke connect software, the images were processed and the behavior of temperature difference with various samples of TIMs and without TIM is presented in Fig. 11. During testing, the heat sink was used with four samples of TIM and without TIM, which was already mentioned in section “Characterization of TIM samples”. It is observed that lower the temperature difference, the better the thermal interface material and its thermal conductivity. The MOSFET stops working at 200 kHz without using TIM, while conventional thermal grease manages to operate MOSFET at maximum value of 230 kHz. Besides this, it is noticed that a moderate amount of Tungsten (45%) in a TIM can further increase the switching frequency up to a maximum value of 270 kHz. This is evident from the profile of temperature difference for Sample 2.

Fig. 11
figure 11

Behavior of temperature difference between MOSFET and surface of heat sink by varying switching frequency.

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On the other hand, low (10%) and high (67%) amount of Tungsten material in a TIM can achieve lower values of switching frequency such as 250 kHz and 260 kHz as can be seen from the trends of temperature difference of Sample 1 and Sample 3, respectively. From the aforementioned discussion, it is evident that a high value of switching frequency can be achieved by using a better thermal management technique.

Temperature values were recorded with a FLUKE Ti-400 thermal imaging camera, which offers readings up to two decimal places. Thermal camera images at failing point are shown in Fig. 12. Figure 12a,c,e,g,i show temperature distribution of MOSFET surface with No TIM, Thermal grease, TIM Sample 1, TIM Sample 2, TIM Sample 3 respectively. On the other hand, Fig. 12b,d,f,h,j show the temperature distribution on surface of heat sink with no TIM, Thermal grease, TIM Sample 1, TIM Sample 2, TIM Sample 3 respectively. Thermal images were taken from both the front and the back which showed us the temperature at the surface of the heat sink as well as at the MOSFET respectively, and the readings were taken at 10 kHz, 50 kHz, 100 kHz, 150 kHz, and then the frequency was increased in the interval of 10 kHz up to the point that the MOSFET stopped working due to excessive heating. Table 5 shows the threshold value of temperature at which the MOSFET failure was noted by using No TIM, Thermal paste, and three samples of TIM.

Fig. 12
figure 12

Thermal camera images of MOSFET and Heatsink (a) MOSFET without TIM, (b) Heat sink without TIM, (c) MOSFET with thermal grease, (d) Heat sink with thermal grease, (e) MOSFET with sample 1, (f) Heat sink with sample 1, (g) MOSFET with sample 2, (h) Heat sink with sample 2, (i) MOSFET with sample 3, (j) Heat sink with sample 3.

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Table 5 Threshold temperature values of MOSFET.
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Conduction losses of MOSFET

In this section, the focus lies on the examination of conduction losses of MOSFET within a boost converter circuit, a critical consideration in the field of power electronics. Furthermore, a quantitative analysis is carried out to evaluate the impact of TIM samples on the thermal management in a MOSFET.

In semiconductor switching devices like MOSFET, efficient thermal management is of paramount importance. An essential aspect of this thermal management strategy involves assessing MOSFET’s conduction losses, that occur within the MOSFET, directly influencing the device’s operational efficiency and reliability. To assess the effectiveness of TIM samples in reducing these conduction losses, we rely on the following formula which quantifies the conduction losses in a MOSFET:

$${\text{P}}_{\text{cond}}= {{\text{I}}_{\text{G}}}^{2} \times {\text{R}}_{\text{DS}\left(\text{ON}\right)}$$
(1)

where, \({\text{P}}_{\text{cond}}\) represents conduction losses in a MOSFET, \({\text{I}}_{\text{G}}\) is gate current recorded at the time of experiment via digital multimeter and \({\text{R}}_{\text{DS}\left(\text{ON}\right)}\) denotes the drain-source ON resistance in a MOSFET which increases with the increase in temperature. RDS(ON) at various temperature values can be calculated using the aforementioned formula with the help of a plot of normalized RDS(ON) against Junction temperature (TJ). Figure 13 presents the results illustrating power dissipation in a MOSFET at various switching frequencies for each specific type of TIM utilized. These results offer valuable insights into identifying the most efficient TIM which minimizes conduction losses and ensures reliable operation.

Fig. 13
figure 13

Power loss against switching frequency in MOSFET.

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In the absence of TIM, the plot abruptly terminates at 180 kHz, highlighting the highest level of conduction loss compared to all other TIM scenarios. Conversely, when thermal paste is applied, a noticeable reduction in power dissipation is observed, offering a stark contrast to the scenario where no TIM was employed. The interruption in the line’s continuity is attributed to the temperature surpassing the threshold indicated in the normalized RDS(ON) versus temperature plot. Furthermore, among the three proposed TIM samples, the lowest power dissipation occurs when sample 2 is utilized throughout the MOSFET’s operation, followed by sample 3, with sample 1 exhibiting the highest power dissipation. Collectively, all TIM samples demonstrate a considerable reduction in dissipated power due to conduction losses in the MOSFET, ultimately enhancing the durability and longevity of the switching components.

Conclusion

In this research work, a novel Tungsten-Gallium based thermal interface material was developed to enhance thermal management in power electronics circuits. In the proposed thermal interface material, an explorative approach was used to prepare the samples with intended concentrations of (Ga 90%, W 10%), (Ga 55%, W 45%), and (Ga 10%, W 90%) for samples 1, 2, and 3, respectively. While it is possible that an optimal mixing ratio exists outside the tested concentrations, future work will systematically explore the concentration spectrum in finer increments to identify the optimal ratio. With the aforementioned prepared mixture, it was observed that the addition of Tungsten particles to oxidized Gallium resulted in a significant increase in thermal conductivity, rising from 13.1 W/m.K to 22.86 W/m.K. The introduction of Tungsten into the Gallium-based Thermal Interface Material (TIM) led to a significant enhancement in its viscosity and fluidity, even under extreme temperatures reaching up to 308 °C. Subsequently, the samples were characterized and tested in a DC-DC boost converter circuit. The results demonstrated that adding tungsten particles to gallium effectively increased its thermal conductivity, making it appropriate for use in vertically mounted MOSFETs. In addition, when the proposed TIM sample 2(45 wt% W, 55 wt% Ga) was used in a DC-DC boost converter, it was observed that the switching frequency of MOSFET IRF3808 increased further up to 20 kHz while the conduction losses were lowest as compared to the conventional TIM and two other proposed TIM samples. Moreover, the proposed TIM offers a remarkable cost advantage, with an average cost of only $0.518 per gram compared to the commercially available liquid metal-based TIM which costs $11.75 per gram. These findings highlight the cost-effectiveness and practicality of utilizing tungsten-doped gallium-based TIM for efficient heat dissipation in MOSFET and other power electronics circuits.