This Review explores Bi2O2Se as a promising 2D semiconductor for next-generation computing, highlighting its high mobility, suitable bandgap and native high-κ oxide, which enables wafer-scale integration and compatibility with industrial processes, while addressing key challenges in the lab-to-fab transition and proposing a roadmap for ultra-scaled, energy-efficient electronics.
- Congwei Tan
- Junchuan Tang
- Hailin Peng