An attractive method to fabricate graphene transistors is transferring high-quality graphene sheets to a suitable substrate. This study identifies diamond-like carbon as a new substrate for graphene devices. It is attractive as few sources for scattering are expected at the interface that may lead to deterioration of device properties. Graphene transistors operating at radio frequencies with cutoff as high as 155 GHz and with scalable gate length are demonstrated. Unlike conventional semiconductor devices, the high-frequency performance of the graphene devices exhibits little temperature dependence down to 4.3 K, providing a much larger operation window than conventional devices.
- Yanqing Wu
- Yu-ming Lin
- Phaedon Avouris